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Not for new design, this product will be obsoleted soon
BFQ81
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
* * * * * Small feedback capacitance Low noise figure e3 Low cross modulation Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
1
2
3
18991
Applications
RF amplifier up to 2 GHz, especially for mobile telephone.
Electrostatic sensitive device. Observe precautions for handling.
Mechanical Data
Case: SOT-23 Plastic case Weight: approx. 8.8 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part BFQ81 Ordering code BFQ81-GS08 RA Marking Remarks Tape and Reel SOT-23 Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb 60 C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 25 16 2 30 200 150 - 65 to + 150 Unit V V V mA mW C C
Maximum Thermal Resistance
Parameter Junction ambient
1) 1)
Test condition
Symbol RthJA
Value 450
Unit K/W
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu
Document Number 85023 Rev. 1.6, 08-Sep-08
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BFQ81
Vishay Semiconductors Electrical DC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage Test condition VCE = 25 V, VBE = 0 VCB = 20 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 IC = 30 mA, IB = 3 mA Symbol ICES ICBO IEBO V(BR)CEO VCEsat hFE hFE 70 70 16 0.2 100 100 0.5 150 Min Typ. Max 100 100 10 Unit A nA A V V
DC forward current transfer ratio VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 15 mA
Electrical AC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Transition frequency Test condition VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 15 mA, f = 500 MHz Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure VCB = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 10 V, IC = 5 mA, ZS = 50 , f = 800 MHz VCE = 10 V, IC = 5 mA, ZS = ZSopt, f = 2 GHz Power gain VCE = 10 V, IC = 5 mA, ZS = 50 , ZL = ZLopt, f = 800 MHz VCE = 10 V, IC = 25 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 VCE = 10 V, IC = 25 mA, f = 800 MHz Symbol fT fT Ccb Cce Ceb F F Gpe Min Typ. 4.2 5.8 0.35 0.2 1.1 1.4 2.5 15 Max Unit GHz GHz pF pF pF dB dB dB
Linear output voltage - two tone intermodulation test Third order intercept point
V1 = V2
160
mV
IP3
27
dBm
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Document Number 85023 Rev. 1.6, 08-Sep-08
BFQ81
Vishay Semiconductors Common Emitter S-Parameters
Z0 = 50 , Tamb = 25 C, unless otherwise specified VCE/V IC/mA f/MHz LIN MAG deg 1 2 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 3 2 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 3 5 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 6 2 100 0.868 0.681 0.565 0.491 0.478 0.472 0.480 0.491 0.506 0.523 0.554 0.573 0.600 0.882 0.709 0.577 0.477 0.450 0.432 0.433 0.445 0.459 0.471 0.501 0.521 0.543 0.741 0.497 0.386 0.332 0.324 0.323 0.333 0.352 0.367 0.381 0.414 0.434 0.459 0.887 -29.7 -77.6 -109.5 -142.9 -157.7 -171.0 173.1 159.5 151.7 144.4 133.5 123.9 117.4 -24.8 -66.7 -97.2 -130.9 -147.3 -162.0 179.7 164.6 156.0 147.7 136.4 126.5 119.1 -38.2 -91.6 -122.9 -153.1 -166.2 -178.8 167.3 155.1 147.8 140.3 131.2 123.0 116.9 -23.2 S11 ANG LIN MAG deg 6.78 5.08 3.77 2.67 2.25 1.94 1.64 1.42 1.32 1.23 1.13 1.04 0.97 6.74 5.32 4.09 2.96 2.50 2.16 1.83 1.58 1.45 1.36 1.24 1.14 1.07 13.66 8.67 5.90 3.94 3.26 2.77 2.30 1.98 1.82 1.69 1.54 1.41 1.32 6.76 157.2 125.2 106.3 87.8 79.1 71.1 60.8 51.7 46.8 42.1 35.3 29.4 26.3 160.3 130.7 111.8 93.2 84.6 76.5 66.4 57.5 52.6 48.1 41.2 35.1 32.2 150.6 116.8 100.7 86.1 79.4 72.9 64.6 56.8 52.5 48.5 42.3 36.4 33.2 161.2 S21 ANG LIN MAG deg 0.045 0.098 0.120 0.136 0.144 0.152 0.168 0.189 0.208 0.228 0.262 0.294 0.315 0.032 0.073 0.092 0.106 0.113 0.120 0.134 0.153 0.169 0.188 0.220 0.252 0.275 0.028 0.056 0.072 0.095 0.112 0.130 0.156 0.186 0.206 0.227 0.256 0.284 0.303 0.026 72.3 50.7 42.0 39.4 40.4 42.6 46.6 50.6 52.6 53.8 54.3 53.7 53.0 74.9 55.2 46.8 44.4 46.0 48.6 53.8 58.9 61.4 63.3 64.8 65.0 64.5 70.6 56.0 55.6 59.4 61.5 62.6 63.8 63.9 63.4 62.8 61.4 59.8 58.8 76.4 S12 ANG LIN MAG deg 0.939 0.720 0.576 0.477 0.447 0.424 0.399 0.381 0.368 0.355 0.340 0.316 0.305 0.958 0.798 0.680 0.593 0.569 0.551 0.531 0.519 0.511 0.502 0.495 0.478 0.471 0.890 0.619 0.504 0.451 0.439 0.433 0.422 0.413 0.406 0.398 0.389 0.372 0.364 0.966 -14.2 -30.3 -35.3 -37.3 -38.7 -40.8 -45.0 -50.4 -54.5 -59.0 -67.3 -76.1 -81.9 -10.0 -22.2 -26.0 -27.9 -29.2 -30.9 -34.4 -38.5 -41.8 -45.2 -51.5 -58.3 -63.1 -17.2 -28.6 -27.5 -25.3 -25.4 -26.6 -29.7 -33.7 -36.6 -39.8 -45.7 -52.0 -56.7 -8.3 S22 ANG
Document Number 85023 Rev. 1.6, 08-Sep-08
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BFQ81
Vishay Semiconductors
VCE/V IC/mA f/MHz LIN MAG deg 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 6 5 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 6 10 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 6 20 100 0.725 0.585 0.473 0.437 0.416 0.410 0.416 0.428 0.446 0.468 0.492 0.514 0.758 0.504 0.378 0.304 0.293 0.288 0.293 0.310 0.328 0.341 0.372 0.397 0.425 0.594 0.340 0.262 0.232 0.226 0.231 0.243 0.261 0.282 0.296 0.326 0.357 0.381 0.415 -62.5 -92.0 -125.6 -142.0 -157.2 -177.0 167.2 157.9 149.4 137.2 127.1 119.9 -34.7 -84.6 -114.5 -146.3 -160.6 -173.5 170.7 157.4 150.0 142.7 133.4 124.4 118.0 -49.3 -105.4 -134.7 -163.7 -174.6 173.7 161.8 150.9 145.1 138.2 130.8 122.7 116.8 -68.7 S11 ANG LIN MAG deg 5.41 4.23 3.08 2.62 2.26 1.91 1.64 1.51 1.41 1.29 1.18 1.10 13.78 9.02 6.20 4.17 3.44 2.93 2.44 2.08 1.91 1.79 1.63 1.49 1.39 21.23 11.25 7.21 4.71 3.85 3.25 2.70 2.31 2.11 1.97 1.79 1.64 1.52 27.88 132.7 114.0 95.5 86.9 78.9 68.9 59.9 55.0 50.8 43.8 37.6 34.2 152.3 118.9 102.5 87.9 81.2 74.8 66.7 59.1 54.8 50.7 44.4 38.3 34.8 142.2 108.9 95.5 83.8 78.1 72.6 65.3 58.3 54.5 50.7 44.8 38.7 35.4 131.7 S21 ANG LIN MAG deg 0.061 0.078 0.091 0.097 0.103 0.115 0.133 0.149 0.167 0.197 0.228 0.251 0.023 0.048 0.062 0.083 0.097 0.112 0.136 0.163 0.182 0.201 0.229 0.257 0.274 0.020 0.040 0.057 0.084 0.102 0.121 0.148 0.177 0.197 0.218 0.246 0.271 0.287 0.017 57.4 49.3 46.9 48.8 52.2 57.8 63.7 66.5 68.9 70.5 71.0 70.7 72.3 57.9 57.5 61.7 63.8 65.5 67.0 67.9 67.7 67.4 66.4 64.9 63.9 69.0 63.8 66.7 69.8 70.8 70.6 69.9 69.1 67.9 66.8 64.8 62.7 61.2 68.66 S12 ANG LIN MAG deg 0.830 0.728 0.652 0.630 0.616 0.598 0.589 0.585 0.580 0.576 0.562 0.555 0.911 0.675 0.575 0.527 0.518 0.513 0.505 0.498 0.494 0.488 0.481 0.463 0.454 0.827 0.558 0.487 0.466 0.467 0.465 0.461 0.455 0.450 0.442 4634 0.414 0.403 0.728 -18.6 -22.0 -23.7 -24.9 -26.6 -30.0 -33.6 -36.6 -39.6 -45.2 -51.3 -55.4 -14.1 -23.5 -22.6 -21.1 -21.6 -22.8 -25.9 -29.6 -32.4 -35.2 -40.6 -46.1 -49.6 -19.7 -23.8 -19.8 -17.4 -18.0 -19.6 -23.0 -26.8 -29.7 -32.5 -37.9 -43.0 -46.2 -23.6 S22 ANG
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Document Number 85023 Rev. 1.6, 08-Sep-08
BFQ81
Vishay Semiconductors
VCE/V IC/mA f/MHz LIN MAG deg 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 10 2 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 10 5 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 10 10 100 0.245 0.211 0.203 0.204 0.209 0.228 0.249 0.266 0.283 0.313 0.344 0.381 0.897 0.732 0.589 0.465 0.430 0.403 0.396 0.398 0.411 0.426 0.454 0.480 0.507 0.774 0.515 0.379 0.298 0.278 0.269 0.275 0.288 0.306 0.322 0.349 0.377 0.408 0.625 -130.0 -156.3 -179.2 172.3 164.0 154.3 145.7 141.1 136.0 128.2 122.0 116.6 -22.3 -60.6 -89.4 -122.9 -139.4 -155.1 -175.1 168.9 159.6 150.5 137.9 128.4 121.3 -33.0 -80.6 -110.1 -141.4 -156.2 -170.2 173.1 159.7 151.4 143.9 134.8 126.0 119.5 -45.8 S11 ANG LIN MAG deg 12.36 7.69 4.93 4.03 3.40 2.81 2.39 2.20 2.04 1.86 1.70 1.59 6.81 5.50 4.31 3.16 2.67 2.31 1.95 1.68 1.55 1.45 1.32 1.21 1.13 13.72 9.14 6.31 4.24 3.51 2.98 2.48 2.12 1.95 1.82 1.65 1.52 1.42 21.09 101.8 90.9 80.9 75.9 70.8 64.0 57.5 53.7 50.2 44.3 38.3 34.2 161.7 133.6 114.9 96.5 88.0 79.9 70.1 61.3 56.5 52.0 44.9 38.6 34.5 153.0 120.0 103.3 88.7 82.1 75.7 67.7 60.1 55.9 51.9 45.6 39.3 35.2 143.5 S21 ANG LIN MAG deg 0.036 0.055 0.084 0.105 0.125 0.154 0.184 0.204 0.224 0.253 0.279 0.295 0.023 0.055 0.070 0.081 0.087 0.093 0.105 0.122 0.137 0.155 0.184 0.215 0.237 0.021 0.044 0.056 0.075 0.088 0.102 0.123 0.148 0.166 0.184 0.211 0.239 0.257 0.018 70.64 73.69 74.84 74.36 73.34 71.71 70.16. 68.50 66.99 64.48 61.81 59.61 76.6 58.4 50.3 48.8 50.9 54.6 60.8 66.9 70.0 72.5 74.4 74.8 73.9 72.8 59.0 58.2 62.7 65.4 67.3 69.2 70.5 70.7 70.7 70.0 68.7 67.4 70.0 S12 ANG LIN MAG deg 0.482 0.445 0.440 0.445 0.447 0.444 0.438 0.432 0.425 0.414 0.390 0.374 0.970 0.849 0.753 0.686 0.667 0.654 0.641 0.634 0.630 0.628 0.626 0.611 0.598 0.921 0.709 0.617 0.577 0.569 0.564 0.559 0.554 0.551 0.547 0.541 0.524 0.512 0.851 -20.7 -15.7 -13.9 -15.0 -17.0 -20.8 -24.8 -27.8 -30.7 -36.3 -41.5 -44.3 -7.4 -16.7 -19.7 -21.4 -22.7 -24.2 -27.2 -30.8 -33.5 -36.6 -41.9 -47.7 -51.7 -12.4 -20.6 -19.9 -18.9 -19.5 -20.8 -23.8 -27.4 -30.0 -32.6 -37.9 -43.2 -46.5 -16.9 S22 ANG
Document Number 85023 Rev. 1.6, 08-Sep-08
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BFQ81
Vishay Semiconductors
VCE/V IC/mA f/MHz LIN MAG deg 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 10 20 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 0.349 0.259 0.215 0.208 0.209 0.222 0.241 0.256 0.275 0.304 0.332 0.364 0.465 02.49 0.201 0.189 0.188 0.189 0.206 0.226 0.244 0.2.64 0.297 0.322 0.351 -99.0 -127.9 -157.9 -170.0 176.9 163.8 152.4 145.9 139.7 131.6 123.7 118.7 -63.2 -121.5 -148.9 -174.5 175.6 166.4 155.9 147.1 141.7 135.4 128.6 123.2 118.2 S11 ANG LIN MAG deg 11.39 7.34 4.79 3.92 3.32 2.75 2.34 2.15 2.01 1.82 1.68 1.56 27.66 12.49 7.77 4.99 4.07 3.44 2.84 2.42 2.22 2.07 1.88 1.73 1.61 109.9 96.4 84.5 79.0 73.5 66.3 59.4 55.5 51.9 45.8 39.5 65.7 133.0 102.6 91.7 81.4 76.6 71.5 65.0 58.4 54.7 51.0 45.2 39.3 35.3 S21 ANG LIN MAG deg 0.037 0.052 0.075 0.092 0.109 0.134 0.161 0.180 0.198 0.225 0.252 0.268 0.015 0.033 0.050 0.076 0.094 0.112 0.138 0.165 0.184 0.203 0.230 0.257 0.274 63.8 67.2 70.7 71.8 72.0 71.9 71.6 70.7 69.6 68.4 66.3 64.6 68.1 70.3 73.6 75.2 75.3 74.7 73.7 72.6 71.4 70.3 68.4 66.0 64.2 S12 ANG LIN MAG deg 0.605 0.541 0.523 0.524 0.523 0.520 0.517 0.514 0.508 0.502 0.481 0.467 0.762 0.541 0.509 0.506 0.511 0.511 0.510 0.507 0.504 0.499 0.492 0.470 0.453 -20.5 -17.1 -15.7 -16.5 -18.0 -21.2 -24.9 -27.7 -30.6 -35.6 -40.7 -43.8 -20.1 -17.3 -13.6 -12.7 -13.9 -15.9 -19.4 -23.3 -26.2 -28.9 -34.3 -39.5 -42.8 S22 ANG
Typical Characteristics (Tamb = 25 C unless otherwise specified)
300
Ptot - Total Power Dissipation (mW)
f T - Transition Frequency ( MHz )
7000 V CE = 10 V 6000 5000 4000 3000 2000 1000 f = 500 MHz 0 0 5 10 15 20 25 30 1V 5V
250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Tamb - Ambient Temperature (C)
96 12159
12871
I C - Collector Current ( mA )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Transition Frequency vs. Collector Current
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Document Number 85023 Rev. 1.6, 08-Sep-08
BFQ81
Vishay Semiconductors
Ccb - Collector Base Capacitance ( pF )
1.0 0.8 0.6 0.4 0.2 f = 1 MHz 0 0 4 8 12 16 20 V CB - Collector Base Voltage ( V )
12885
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
2.5
F - Noise Figure ( dB )
2.0 ZS = 50 1.5 ZS = Z Sopt 1.0 0.5 V CE =10 V f = 800 MHz 0 0 4 8 12 16 20
12873
I C - Collector Current ( mA )
Figure 4. Noise Figure vs. Collector Current
4
F - Noise Figure ( dB )
3
ZS = 50
ZS = Z Sopt 2
1 VCE =10 V f = 2 GHz 0 0 4 8 12 16 20
12874
I C - Collector Current ( mA )
Figure 5. Noise Figure vs. Collector Current
Document Number 85023 Rev. 1.6, 08-Sep-08
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BFQ81
Vishay Semiconductors
VCE = 10 V, IC = 10 mA, Z0 = 50
S11
j j0.5 j2
S12
90 120 60
150 j0.2
3.0 GHz 2.0
3.0 GHz 2.0 1.0
30
j5
0
0.2
1.0
1
2
5
-j5
180
0.1
0.2
0.4
0
-j0.2
0.3 0.1
-150 -j2
13 503
-30
-j0.5
13502
-120 -90
-60
-j
Figure 6. Input Reflection Coefficient
Figure 8. Reverse Transmission Coefficient
S21
90 120
0.1
S22
j 60 j0.5 30
1.0
j2
150
0.3
j0.2
j5
180
3.0 GHz
10
20
0
0
0.2
0.5
1 3.0 GHz
2
0.8
5 0.1
-j5
-j0.2 -150 -30 -j0.5
13 504
-j2 -j
-120
-60 -90
13 505
Figure 7. Forward Transmission Coefficient
Figure 9. Output Reflection Coefficient
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Document Number 85023 Rev. 1.6, 08-Sep-08
BFQ81
Vishay Semiconductors Package Dimensions in mm (Inches)
17418
Document Number 85023 Rev. 1.6, 08-Sep-08
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BFQ81
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85023 Rev. 1.6, 08-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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